Publication detail

TOF-LEIS spectra of Ga/Si: Peak shape analysis

KOLÍBAL, M. TOMANEC, O. PRŮŠA, S. PLOJHAR, M. MARKIN, S. DITTRICHOVÁ, L. SPOUSTA, J. BAUER, P. ŠIKOLA, T.

Czech title

TOF-LEIS spektra Ga/Si: analýza tvaru píku.

English title

TOF-LEIS spectra of Ga/Si: Peak shape analysis

Type

journal article - other

Language

en

Original abstract

Low energy ion scattering (LEIS) is used to characterize Ga layers deposited onto Si(111)-(7x7) substrates at different deposition temperatures. The Ga/Si system exhibits a pronounced 3D island growth and thus is a suitable object to investigate the relation between LEIS-peak shapes and the morphology of thin films. It is shown that up to a certain critical depth (a few MLs) the single scattering component can be used as a measure of the number of surface Ga atoms per unit area. If a higher amount of Ga is deposited, the single scattering model is not valid anymore and multiple scattering becomes significant. The Ga peak starts to be asymmetric with a well developed multiple scattering component. Such a component can be utilized for the observation of the morphology of the layers. It was found that the more intensive the 3D growth of adsorbed Ga atoms on the Si(111) substrate, the more pronounced is the multiple scattering yield for a given amount of Ga.

Czech abstract

Rozptyl nízkoenergiových iotů (TOF-LEIS) byl použit k charakterizaci vrstev Ga na křemíkovém substrátu – Si(111)-(7x7). Tvar píku poskytuje informace o vícenásobném rozptylu a tedy o morfologii připravené vrstvy.

English abstract

Low energy ion scattering (LEIS) is used to characterize Ga layers deposited onto Si(111)-(7x7) substrates at different deposition temperatures. The Ga/Si system exhibits a pronounced 3D island growth and thus is a suitable object to investigate the relation between LEIS-peak shapes and the morphology of thin films. It is shown that up to a certain critical depth (a few MLs) the single scattering component can be used as a measure of the number of surface Ga atoms per unit area. If a higher amount of Ga is deposited, the single scattering model is not valid anymore and multiple scattering becomes significant. The Ga peak starts to be asymmetric with a well developed multiple scattering component. Such a component can be utilized for the observation of the morphology of the layers. It was found that the more intensive the 3D growth of adsorbed Ga atoms on the Si(111) substrate, the more pronounced is the multiple scattering yield for a given amount of Ga.

Keywords in Czech

Rozptyl iontů; Morfologie; Růst; Gallium; Křemík

Keywords in English

Low energy ion scattering; Morphology; Growth; Gallium; Silicon

RIV year

2007

Released

01.12.2007

ISSN

0168-583X

Journal

Nuclear Instruments and Methods in Physics Research B

Volume

265

Number

2

Pages from–to

569–575

Pages count

7

BIBTEX


@article{BUT44960,
  author="Miroslav {Kolíbal} and Ondřej {Tomanec} and Stanislav {Průša} and Martin {Plojhar} and S. N. {Markin} and Libuše {Dittrichová} and Jiří {Spousta} and P. {Bauer} and Tomáš {Šikola},
  title="TOF-LEIS spectra of Ga/Si: Peak shape analysis",
  journal="Nuclear Instruments and Methods in Physics Research B",
  year="2007",
  volume="265",
  number="2",
  month="December",
  pages="569--575",
  issn="0168-583X"
}