Course detail

Nanoelectronics

FSI-TNI-A Acad. year: 2027/2028 Winter semester

The course provides an overview of current developments in nanoelectronics, focusing on the physical principles of electronic and quantum phenomena in low-dimensional structures and advanced electronic devices. It covers semiconductor nanostructures, 2D materials and their applications in electronics, quantum transport, and novel transistor concepts. Further topics include advanced photovoltaic technologies and the use of nanomaterials in energy applications, quantum communication and the fundamentals of quantum computing, magnetic materials, and spintronics. Emphasis is placed on understanding the physical mechanisms underlying the development of novel electronic, memory, and energy technologies.

Language of instruction

English

Number of ECTS credits

4

Supervisor

prof. Ing. Miroslav Kolíbal, Ph.D.

Department

Institute of Physical Engineering

Entry knowledge

Basic knowledge of general physics, quantum physics, and solid-state physics. Students are expected to understand the fundamental principles of the electronic structure of solids, energy bands, and charge-carrier transport properties.

Rules for evaluation and completion of the course

The course is completed by an examination. The final assessment is based on the student's performance in a test and an oral examination conducted in the form of a scientific discussion of assigned topics. During the examination, students are expected to demonstrate an understanding of the physical principles underlying electronic and quantum phenomena in nanoelectronic materials and devices, explain their properties, and discuss their potential applications. Students are allowed to use their own lecture notes when preparing for the examination and during the exam.

The assessment of tutorial work is based on the correctness of the solutions to assigned problems, understanding of the underlying physical principles, and the ability to interpret the results obtained.

Attendance at tutorials and computer-assisted tutorials is compulsory and monitored by the instructor. Any missed classes must be made up in a manner specified by the instructor, taking into account the extent and content of the missed classes.

To pass the course, students must meet the attendance requirements and successfully pass the examination.

Aims

Upon successful completion of the course, students will be able to:

  • explain the fundamental electronic and quantum phenomena relevant to nanoelectronic materials and structures;

  • describe the relationships between structure, electronic properties, and functionality of selected nanoelectronic materials, particularly semiconductors, dielectrics, ferroelectrics, magnetic materials, and organic molecules;

  • explain the physical principles underlying selected nanoelectronic devices and their operation;

  • identify opportunities for exploiting quantum phenomena, spintronics, and molecular electronics in the design of novel electronic devices;

  • assess the potential applications of selected nanoelectronic materials and devices in information processing and storage, sensors, displays, and energy-related technologies;

  • understand current trends and future prospects in nanoelectronics.

Study aids

PowerPoint presentations are available in PDF format in the e-learning systém.

The study programmes with the given course

Programme N-FIN-P: Physical Engineering and Nanotechnology, Master's, compulsory-optional

Type of course unit

 

Lecture

26 hours, optionally

Syllabus

1. Introduction to Nanoelectronics. Electronic properties of materials and quantum phenomena in spatially confined structures.


Block 1:




  1. Semiconductors and semiconductor nanostructures. Charge carriers, their energy states, and transport properties in low-dimensional structures. MOSFET structures and the physics of MOS transistors.




  2. Novel device concepts. Quantum devices based on resonant tunnelling and single-electron devices. Ferroelectric-based transistors and negative capacitance.




Block 2:




  1. 2D nanoelectronics: charge transport and quantum states in two-dimensional confinement. Quantum Hall effect.




  2. Graphene-based electronics.




Block 3:




  1. Principles of solar cells, large-area photovoltaics, and advanced photovoltaic concepts (tandem cells, etc.).




  2. Nanostructured solar cells and emerging directions in the use of nanomaterials for energy applications.




Block 4:




  1. Quantum transport and quantum point contacts.




  2. Quantum communication and fundamentals of quantum computing.




Block 5:




  1. Ferromagnets, antiferromagnets, and altermagnets: properties.




  2. Spintronics: spin Hall effect and magnetoresistance.




  3. Magnetism-based devices, memory technologies, and emerging concepts in in-memory computing



Exercise

20 hours, compulsory

Syllabus



  1. Electronic properties of semiconductors. Energy bands, charge carriers, and carrier concentrations.




  2. Quantum phenomena in low-dimensional structures. Quantum wells, wires and dots, and the density of electronic states.




  3. Transport properties of nanoelectronic structures. Electrical conductivity, carrier transport, and the influence of interfaces.




  4. Dielectric and ferroelectric properties of materials. Polarization, capacitance, and fundamental characteristics of ferroelectrics.




  5. Physical principles of selected nanoelectronic devices. MOSFETs, tunnelling devices, and single-electron devices.




  6. Applications of nanoelectronic materials and devices in memory elements, sensors, and other technologies.



Computer-assisted exercise

6 hours, compulsory

Syllabus

Conducted concurrently with the tutorials, providing supplementary support for selected assignments.